Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets(1≤n≤4)on SiO2/Si substrate  

作　　者：Yi-Ping Wang Hui-Jun Zhou Gui-Hua Zhao Tian-Long Xia Lei Wang Le Wang Li-Yuan Zhang 

机构地区：[1]Department of Physics,Renmin University of China,Beijing 100872,China [2]Beijing Key Laboratory of Opto-electronic Functional Materialsand Micro-nano Devices,Renmin University of China [3]Department of Power and Electrical Engineering,Northwest A&F University,Yangling 712100,Shaanxi,China

出　　处：《Rare Metals》2016年第8期632-636,共5页稀有金属（英文版）

基　　金：financially supported by the Research Funds of Renmin University of China(Nos.13XNLF02 and 14XNLQ07);the National Natural Science Foundation of China(Nos.11304381,11004245,11174366 and 51202200)

摘　　要：The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.

关 键 词：Thickness identification Optical contrast MoSe2 Optical microscopy 

分 类 号：O614.612[理学—无机化学]