F8BT∶P3HT共混薄膜放大自发辐射的温度效应  

Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8BT and P3HT

作　　者：王尉谦 秦亮[1] 林涛[1] 侯延冰[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《发光学报》2016年第8期973-978,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61275175)资助项目

摘　　要：研究了温度对聚合物poly(9,9-dioctylfluorene-co-benzothiadiazole)(F8BT)和poly(3-hexylthiophene)(P3HT)共混薄膜的放大自发辐射(ASE)的影响。在80~320 K温度范围测试了不同P3HT质量比的共混聚合物薄膜和纯F8BT薄膜的ASE特性。在室温条件下,共混聚合物的阈值随着P3HT所占比例的增加先降低后升高。当P3HT比例约为20%时,阈值最低约为2.59×10~3W/cm^2。当温度从320 K下降到80 K时,纯F8BT薄膜的ASE阈值光功率由5.36×10~3W/cm^2下降到4.15×10~3W/cm^2,P3HT质量比为20%的共混薄膜的ASE阈值光功率由2.84×10~3W/cm^2下降到2.03×10~3W/cm^2。在一特定泵浦光功率(5.29×10~3W/cm^2)下,当温度由320 K下降至80 K时,ASE强度约提高4倍。随着温度的降低,混合物薄膜的ASE峰位红移,移动达12 nm。The temperature dependence of amplified spontaneous emission（ ASE） from blend film of poly（ 9,9-dioctylfluorene-co-benzothiadiazole）（ F8BT） and poly（ 3-hexylthiophene）（ P3HT） was investigated. ASE from blend film with various P3HT mass ratio and F8 BT film in the range of 80-320 K was measured. The results show that the threshold of blend film decreases at first and then increases at room temperature with the increasing of P3HT ratio. Low ASE threshold about 2. 59 × 103 W / cm2 is achieved for the blend with 20% P3HT ratio. When the temperature dropped from 320 K to 80 K,ASE threshold of the blend with 20% P3HT decreases from 2. 84 × 103 W / cm2 at 320 K to2. 03 × 103 W / cm2 at 80 K,and ASE output intensity at the pump intensity of 5. 29 × 103 W / cm2 increases fourfold. Meanwhile,a 12 nm redshift in ASE wavelength of the blend film is found with the reducing of the temperature.

关 键 词：放大的自发辐射 温度效应 聚合物共混波导 阈值 

分 类 号：O484.4[理学—固体物理]