高亮度锥形半导体激光器  

High Brightness Tapered Diode Laser

作　　者：李景[1] 邱运涛[1] 曹银花[1] 王青[1] 尧舜[1] 秦文斌[1] 刘友强[1] 王智勇[1] 

机构地区：[1]北京工业大学激光工程研究院,北京100124

出　　处：《发光学报》2016年第8期990-995,共6页Chinese Journal of Luminescence

基　　金："863"国家高技术研究发展计划(2014AA032609);国家自然科学基金(61404050);广东省科技计划(2014B010119002;2016A010103011);中央高校基本科研业务费专项资金(2015ZM131)资助项目

摘　　要：介绍了由双量子阱非对称波导结构外延片刻蚀成的带有脊形波导结构的锥形半导体激光器。该激光器有效抑制了p型区域对激光的影响,减小了半导体激光快轴方向的发散角,同时采用脊形结构和锥形结构的组合获得了高亮度激光。实验中,在电流7 A时获得了中心波长963 nm、连续功率4.026 W的激光输出。测得慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm·mrad和0.668 mm·mrad。Tapered diode laser with ridge waveguide was introduced and formed through etching the wafer with asymmetrical waveguide structure and double quantum walls. In the laser,the negative effect of p-cladding layer was decreased and the vertical divergence angle was reduced. The high brightness power is arrived on account of the combination of the ridge waveguide and the taper waveguide. In experiment,the laser delivers 976 nm and 4 W CW at 7 A current. The slow direction beam quality and the fast direction beam quality are measured of 1. 593 mm·mrad and 0. 668mm·mrad,respectively.

关 键 词：半导体激光器 锥形波导 脊形波导 高亮度 高光束质量 

分 类 号：TN24[电子电信—物理电子学]