一种新研制的W频段固态GaN功率放大器毫米波源  

A Newly-developed W-band Solid-state GaN Power Amplifier Millimeter Wave Source

作　　者：梁勤金[1] 石小燕[1] 潘文武[1] 黄吉金[1] 

机构地区：[1]中国工程物理研究院应用电子学研究所高功率微波技术重点实验室,四川绵阳621900

出　　处：《电讯技术》2016年第8期873-878,共6页Telecommunication Engineering

基　　金：国家高技术研究发展计划(863计划)项目

摘　　要：介绍了一种新研制的W频段固态GaN功率放大器毫米波源,给出了系统组成与工作原理,提供了其主要部件W频段固态Gunn驱动源、W频段波导-微带转换器、主放大器芯片基本性能及实验测试结果。该固态毫米波源工作频率94 GHz,输出连续波功率大于300 m W,线性增益10 d B,附加效率(PAE)大于16%。在W频段固态毫米波源研制过程中,其单片微波集成电路(MMIC)功率放大器半导体材料选择经历了GaAs、InP到GaN演变,结果清楚表明,W频段毫米波源的GaN MMlC功率放大器输出功率、增益、效率、高温性能要优于其他固态MMIC功率放大器性能。W频段大功率固态GaN MMl C技术将在毫米波领域带来新的技术革命和应用。This paper introduces a newly-developed W-band solid-state GaN power amplifier millimeterwave（MMW） source,gives its system composition and operational principle,and provides the basic performanceand experimental results of primary components including W - band solid - state Gunn drivingsource,W-band guide-microstrip line transposition and main amplifier chip. The MMW source operates at94 GHz,its continuous wave power output is larger than 300 mW,linear gain is 10 dB,power-added efficiency（PAE） is greater than 16%. During the development of W-band solid-state MMW source, thechoice of its monolithic microwave integrated circuit（ MMIC） power amplifier of semiconductor material hasundergone GaN,GaAs and InP,which clearly demonstrates that the output power,gain,efficiency and hightemperature performance of W - band GaN MMIC power amplifier is superior to that of other solid - stateMMIC power amplifiers. The high power technology of W-band solid-state GaN MMIC is likely to result innew revolutionized technology and application in the MMW field.

关 键 词：毫米波源 GaN功率放大器 W频段 单片微波集成电路 连续波 

分 类 号：TN73[电子电信—电路与系统]