烧结温度影响Zn-Bi系压敏陶瓷性能研究  

Sintering temperature effect on performance of Zn-Bi system varistor ceramics

作　　者：刘建科[1] 陈永佳[2] 于克锐 王浩[1] 韩晨[2] 崔永宏[1] 

机构地区：[1]陕西科技大学理学院,西安710021 [2]陕西科技大学电气与信息工程学院,西安710021

出　　处：《功能材料》2016年第8期8205-8210,共6页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51272145);陕西省自然科学基金资助项目(2011JM1014)

摘　　要：以95.5ZnO-0.5V_2O_5-2.0Bi_2O_3-0.5Mn_3O_4-0.5Y_2O_3-0.5Cr_2O_3-0.5Co_2O_3为配方制备压敏电阻,研究了烧结温度对该体系微观结构及电学性能的影响。研究表明,随着烧结温度升高,ZnO压敏电阻的击穿场强E1mA逐渐减小,非线性系数α、损耗角正切值tanδ以及相对介电常数εr均先增大再减小。当烧结温度为910℃时,压敏电阻的微观结构均匀,晶界清晰,有大量八面体的尖晶石相生成,且分布均匀。该烧结温度下所制备的压敏电阻的非线性系数α达到最大值27,击穿场强E1mA为3 456.5V/cm,工作频率105 Hz条件下该电阻的损耗角正切值tanδ为0.29。The effect of sintering temperatures on the microstructure,electrical properties and loss performance of 95.5ZnO-0.5V2O5-2.0Bi2O3-0.5Mn3O4-0.5Y2O3-0.5Cr2O3-0.5Co2O3（all in mol%）based on the low-temperature sintering Zn-Bi system had been systematically studied,and the loss performance had been discussed carefully.Meanwhile,we had put forward idea of the restriction impacts of the loss performance of ZnO varistors.The experiments showed that,when the sintering temperature was 910 ℃,the following characteristics obtained：The microstructure of ZnO varistor was quite uniform with distinguishable grain boundaries,and a large amount of spinel phases distributed uniformly could be found clearly.The nonlinear coefficientα was 27 and breakdown electrical field E1 mA was 3 456.5V/cm.The study of dielectric properties showed that the dielectric loss tanδ was between 0.19 and 0.29,which was a relatively high value.In this paper,we had explained this phenomenon in detail.

关 键 词：烧结温度 ZNO压敏电阻 微观结构 电学性能 损耗性能 

分 类 号：TQ174[化学工程—陶瓷工业]