提高有机发光二极管发光性能的阳极修饰方法  

Anode Modification Method for Improving Light Emission Performance of Organic Light Emitting Diode

作　　者：夏树针 王文军[1] 杜倩倩[1] 李淑红[1] 张栋[1] 高学喜[1] 王青如[1] 张丙元[1] 

机构地区：[1]聊城大学物理科学与信息工程学院山东省光通信科学与技术重点实验室,山东聊城252059

出　　处：《激光与光电子学进展》2016年第8期253-258,共6页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61275147;61405085);山东省科技攻关计划(2010GGX10127);山东省自然科学基金(ZR2012AL11;ZR2013EML006);山东省"泰山学者"建设工程专项经费;聊城大学重点科研基金

摘　　要：通过在有机发光二极管(OLED)的阳极与空穴传输层NPB之间加入m-MTDATA作为缓冲层来研究缓冲层对器件性能的影响。制备了ITO/m-MTDATA(dnm)/NPB(40-dnm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)、ITO/MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)结构的器件,研究不同m-MTDATA厚度对OLED发光亮度、电流密度、电流效率等性能的影响。实验发现,当缓冲层的厚度为15nm时,器件的启亮电压从未加缓冲层的13V降到了9V,最大发光亮度从未加缓冲层的5900cd/m2增加到16300cd/m2,是原来的2.76倍。最高的电流效率也由未加缓冲层的1.8cd/A变为3.5cd/A,是原来的1.94倍。然后在器件的氧化铟锡(ITO)与NPB之间插入了厚度为15nm的MoO3缓冲层。与同厚度的m-MTDATA器件相比,插入MoO3缓冲层器件的启亮电压降低为8V,最大亮度为13320cd/m2,最大电流密度为6030.74A/m2,最大的电流效率为3.06cd/A。This research investigates the effect of buffer layer on the performance of organic light emitting diodes （OLED） by adding m-MTDATA as buffer layer between anode and hole transport layer NPB. The devices with ITO/m-MTDATA（d nm）/NPB（40-d nm）/Alqa （70 nm）/LiF（0.5 nm）/Al（40 nm） and ITO/ MoO3 （15 nm）/NPB （25 nm）/Alq3 （70 nm）/LiF（0.5 nm）/Al（40 nm） structures are prepared. The effects of m-MTDATA thickness on OLED brightness, current density, current efficiency and other properties are studied. It is found that the turn-on voltage of the device reduces from 13 V to 9 V when the thickness of the buffer layer is 15nm, and the maximum brightness of the device increases from 5900 cd/m2 to 16300 cd/m~ , which is about 2.76 times as much as that of the device without buffer layer. The highest current efficiency also increases from 1.8 cd/A to 3.5 cd/A, which is 1.94 times as much as the device without buffer layer. Then the MoOa buffer layer with the thickness of 15 nm is inserted in the device as a buffer layer between indium tin oxide（ITO） and NPB. Compared to m-MTDATA device with the same thickness, the turn-on voltage of the device with MoO3 buffer layer declines to 8 V, the maximum brightness is 13320 cd/m2 , the maximum current density is 6030.74 A/m2 , and the maximum current efficiency is 3.06 cd/A.

关 键 词：光学器件 有机发光二极管 缓冲层 发光亮度 电流效率 

分 类 号：TN383.1[电子电信—物理电子学]