Superconducting Nanowire Single Photon Detector with Optical Cavity  

作　　者：刘杰 张立群 蒋振南 Kamal Ahmad 刘建设 陈炜 

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology,Department of Microelectronics and Nanoelectronics,Institute of Microelectronics,Tsinghua University

出　　处：《Chinese Physics Letters》2016年第8期143-145,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2011CBA00304;the National Natural Science Foundation of China under Grant Nos 60836001 and 61174084;the Tsinghua University Initiative Scientific Research Program under Grant No 20131089314

摘　　要：Increasing the detection efficiency （DE） is a hot issue in the development of the superconducting nanowire single photon detector （SNSPD）. In this work, a cavity-integrated structure coupled to the SNSPD is used to enhance the light absorption of nanowire. Ultra-thin Nb films are successfully prepared by magnetron sputtering, which are used to fabricate Nb/Al SNSPD with the curve of lOOnm and the square area of 4 × 4μm2 by sputtering and the lift-off method. To characterize the optical and electrical performance of the cavity-integrated SNSPD, a reliable cryogenic research system is built up based on a He3 system. To satisfy the need of light coupling, a packaging structure with collimator is conducted. Both DE and the dark count rates increase with lb. It is also found that the DE of SNSPD with cavities can be up to 0.17% at the temperature of 0.7K under the infrared light of 1550nm, which is obviously higher than that of the SNSPD directly fabricated upon silicon without any cavity structure.Increasing the detection efficiency （DE） is a hot issue in the development of the superconducting nanowire single photon detector （SNSPD）. In this work, a cavity-integrated structure coupled to the SNSPD is used to enhance the light absorption of nanowire. Ultra-thin Nb films are successfully prepared by magnetron sputtering, which are used to fabricate Nb/Al SNSPD with the curve of lOOnm and the square area of 4 × 4μm2 by sputtering and the lift-off method. To characterize the optical and electrical performance of the cavity-integrated SNSPD, a reliable cryogenic research system is built up based on a He3 system. To satisfy the need of light coupling, a packaging structure with collimator is conducted. Both DE and the dark count rates increase with lb. It is also found that the DE of SNSPD with cavities can be up to 0.17% at the temperature of 0.7K under the infrared light of 1550nm, which is obviously higher than that of the SNSPD directly fabricated upon silicon without any cavity structure.

关 键 词：of on with Superconducting Nanowire Single Photon Detector with Optical Cavity DBR DE in IS been that 

分 类 号：TH74[机械工程—光学工程]