超薄埋氧层FDSOI器件制备及其性能测试  

Fabrication and Performance Test of Ultra-Thin Buried Oxide FDSOI Devices

作　　者：谭思昊 李昱东[1] 徐烨峰 闫江[1] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《微纳电子技术》2016年第9期565-570,622,共7页Micronanoelectronic Technology

摘　　要：全耗尽绝缘体上硅(FDSOI)器件具有出色的短沟道效应(SCE)控制能力等优势,是22 nm及以下的CMOS技术节点中的有力竞争者。为了研究减薄埋氧层(BOX)厚度对FDSOI器件性能和短沟道效应的影响,并进一步提高FDSOI器件的短沟道效应控制能力,制备了超薄BOX(UTB)FDSOI器件,并同时制备除BOX厚度外其余条件完全相同的145 nm厚BOX FDSOI对比器件。对制备的器件进行了电学性能测试,展示了两种器件的传输特性和转移特性曲线,并且对器件施加背栅偏压以研究其对器件性能的调制作用。测试结果显示,UTB FDSOI器件的关断电流I_(off)与145 nm厚BOX FDSOI器件相比降低了近50%,DIBL性能也得到了显著提升。此外,施加背栅偏压不仅可以更灵敏地调制FDSOI器件性能,而且可以有效地优化器件的短沟道效应。The fully depleted silicon-on-insulator（FDSOI）device with the advantages of the excellent short-channel effect（SCE）control ability is a most promising technology in CMOS technology nodes of 22 nm and beyond.In order to study the effects of the thinned buried-oxide（BOX）layer on the performance and SCE of the FDSOI devices and improve the SCE control ability of the FDSOI devices,the ultra-thin BOX（UTB）FDSOI device was fabricated,and the145 nm thickness BOX FDSOI device with the same conditions except the BOX thickness was also fabricated to compare the testing results.The electrical performance tests of the prepared devices were carried out,and the transmission characteristic and transfer characteristic curves of the two devices were demonstrated.The back-gate bias was applied on the devices to study the modulation effect of the back-gate bias for the device performances.The test results show that the turnoff current Ioff of the UTB FDSOI device reduces nearly 50% than that of the 145 nm thickness BOX FDSOI device,and the DIBL perfor mance of the UTB FDSOI device is also significantly improved.Besides,through applying the back-gate bias on the UTB FDSOI devices,the performance of the devices was modulated more sensitively,and the SCE of the devices was also effectively optimized.

关 键 词：全耗尽绝缘体上硅(FDSOI) 超薄埋氧层(UTB) 器件制备 短沟道效应(SCE) 背栅偏压 

分 类 号：TN386.1[电子电信—物理电子学]