ICP-MS/MS直接测定高纯Eu_2O_3中超痕量的铥、砷、硅  

Direct Determination of Thulium,Arsenic,Silicon in High Purity Eu_2O_3 by Triple Quadrupole Inductively Coupled-Plasma Mass Spectrometry

作　　者：徐芝亮[1] 吴海燕[2] 张智怡[1] 刘永林[1] 

机构地区：[1]江西省分析测试研究所,江西南昌330029 [2]江西省农业科学院,江西南昌330000

出　　处：《中国稀土学报》2016年第4期453-459,共7页Journal of the Chinese Society of Rare Earths

基　　金：江西省科技计划项目(20133BBG70098)资助

摘　　要：运用三重串联电感耦合等离子质谱(ICP-MS/MS)仪直接测定高纯Eu_2O_3中超痕量的Tm,As和Si。采用H_2的原位质量法和O_2质量转移法,有效克服了基体对待测元素的干扰。通过优化仪器参数得到Tm,As和Si的背景等效浓度分别为0.0005763,0.08435,8.268μg·L^(-1)。在选定条件下,样品加标回收率为95.74%~103.82%,相对标准偏差(RSD)为0.22%~4.38%。本方法简单实用,能够满足纯度99.999%以上的高纯Eu_2O_3中杂质元素的快速测定。A method was developed for direct determination of Tm,As and Si in high purity europium by ICP-MS /MS. The interferences on the analysis were efficiently removed by using H2 and O2 reaction cell gas in MS / MS mode. Under the optimized conditions,the background equivalent concentration of 0. 0005763,0. 08435 and 8. 268 μg·L^- 1 was achieved for Tm,As and Si,respectively. The spike recoveries of these three elements were 98. 71% ~ 103. 26%,and the RSDs was 0. 22% ~ 3. 75%. The method was suitable for the direct determination of impurities in high purity europium of 99. 999% or above.

关 键 词：三重串联电感耦合等离子质谱(ICP-MS/MS) 高纯Eu2O3 铥、砷、硅 干扰 

分 类 号：O657.63[理学—分析化学]