BCZT-xBi_2O_3无铅压电陶瓷性能的研究  

Research on Properties of Lead-free Piezoelectric Ceramics of BCZT-xBi_2O_3

作　　者：周顺龙[1] 刘其斌[1,2] 徐鹏[1] 姚利兰 

机构地区：[1]贵州大学材料与冶金学院,贵阳550025 [2]贵州省材料结构与强度重点实验室,贵阳550025

出　　处：《中国陶瓷》2016年第8期20-24,共5页China Ceramics

基　　金：贵州省工业攻关资助项目(黔科合GY(2013)3027);贵州省科技厅-贵州大学联合基金;黔科合LH字(2015)7650

摘　　要：选取传统高温固相反应合成法制备出Bi_2O_3掺杂的无铅压电陶瓷材料Ba_(0.85)Ca_(0.15)Zr_(0.08)Ti_(0.92)O_3-xBi_2O_3(BCZT-x Bi,x=0~0.15)。采用扫描电子显微镜、准静态压电常数测试仪等一系列检测手段,探讨了Bi_2O_3掺杂对BCZT基无铅压电陶瓷微观组织和电学性能产生的作用,从SEM图像得知,陶瓷的晶粒尺寸随着Bi_2O_3掺杂量的增多先逐渐变小后略微有所增大,XRD图谱则表明,掺杂量不等的Bi^(3+)均能够弥散进入钛酸钡晶格中,能完整固溶于BCZT陶瓷,并且材料具有典型的钙钛矿相结构。当Bi_2O_3掺杂量为0.15 mol%时,此无铅压电陶瓷材料拥有较好的介电性能,介电损耗tanδ的值仅是1.2%,介电常数ε_r的值是5100;当没有掺杂Bi_2O_3时,此陶瓷的压电性能最优,压电系数的值d_(33)=386 p C/N,机电耦合系数的值K_p=44.8%。In order to get Ba（0.85）Ca（0.15）Zr（0.08）Ti（0.92）O3-xBi2O3 lead-free ceramics with better electrical properties, Bi2O3 was doped into BCZT ceramics [BCZT-x Bi, x=0 0.15] and prepared by a traditional high temperature solid state synthetic reaction method. The microstructure and electrical performance of BCZT-xBi ceramics were measured, with the help of the scanning electron microscope（SEM） and quasi-static d（33） meter, etc.. According to the experimental photographs, the grain size decreased first then increased when increasing the amount of Bi2O3. The other experimental data indicated that Bi（3＋） diffused into BaTiO3 lattice and constituted a uniform representative perovskite phase structure sosoloid. When Bi2O3 was doped with content of 0.15 mol%,the dielectric properties in dielectric loss and permittivity of the specimen was 1.2% and 5100, respectively. When doping no content of Bi2O3, the best piezoelectric properties that the piezoelectric constant was 386 p C/N and electro-mechanical coupling factor Kp was 44.8%.

关 键 词：Bi2O3掺杂 Ba0.85Ca0.15Zr0.08Ti0.92O3 显微结构 介电性能 压电性能 

分 类 号：TQ174.764[化学工程—陶瓷工业]