基于石墨烯场效应晶体管的研究进展  

Research Progress on Graphene-Based Field Effect Transistors

作　　者：王聪[1,2] 刘玉荣[3] 

机构地区：[1]汕尾职业技术学院电子信息系,广东汕尾516600 [2]华南理工大学物理与光电学院广东省光电工程技术研究开发中心,广州510640 [3]华南理工大学电子与信息学院,广州510640

出　　处：《半导体技术》2016年第8期561-569,579,共10页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61076113);广东省自然科学基金资助项目(2016A030313474)

摘　　要：在传统硅基器件日益趋近物理极限的背景下,石墨烯场效应晶体管(GFET)作为一种新型纳米器件受到广泛的关注。介绍了GFET的主要器件结构,分析了GFET的工作原理及其基本的电特性。对比论述了4种石墨烯的带隙调控方法,得出化学掺杂法和量子限制法在调控石墨烯带隙方面比外加电场调节法和引入应力法更具有实用价值。重点探讨了几种GFET有源层石墨烯薄膜的制备方法:外延生长法、剥离法、化学气相沉积法(CVD)、氧化石墨烯还原法、旋涂法以及喷涂法,并对比分析了各种制备方法的优缺点。最后概述了GFET的应用前景和挑战。Under the background of traditional silicon-based devices increasingly approaching the physical limits,graphene-based field effect transistors（ GFETs） receive the extensive concern as a new type of nanoelectronic device. The device structure,operation principle and electrical characteristics of the GFET are simply introduced and analyzed. By the comparison of four graphene bandgap regulating methods,it is confirmed that the chemical doping method and quantum confinement method are more practical than external electric field method and stress method in regulating grapheme bandgap. Several preparation methods of grapheme films in GFET active layers are mainly discussed including the epitaxial growth,exfoliation of graphite,chemical vapor deposition（ CVD）,grapheme oxide reduction method,spin coating method and spraying method. The advantages and disadvantages of various preparation methods are compared and analyzed. Finally,the application prospects and challenges of the GFET are summarized.

关 键 词：石墨烯 场效应晶体管(FET) 带隙调控 超高迁移率 制备工艺 

分 类 号：TN386[电子电信—物理电子学]