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机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2016年第8期586-589,635,共5页Semiconductor Technology
摘 要:提出了一种提高微波宽带压控振荡器(VCO)稳定性的方法。压控振荡器采用了从谐振电路输出的结构,并与后级缓冲放大电路之间加入了一个匹配电路,从而可有效提高宽带振荡器的稳定性,改善振荡器的温度特性。基于此电路结构,采用Ga As HBT工艺设计了一款微波宽带压控振荡器芯片。为拓宽振荡器的工作频带和降低相位噪声,使用片外Ga As超突变结、高Q值变容二极管。该宽带压控振荡器芯片实测结果显示,在调谐电压为1.5~15 V内,可实现输出频率覆盖13~19 GHz,调谐线性度≤2.5∶1,调谐电压8 V时相位噪声为-89 d Bc/Hz@100 k Hz。该压控振荡器工作电压为5 V,工作电流为65 m A,19 GHz频率点处输出功率在85℃环境温度下比在25℃环境温度下仅下降2 d B,具有良好的温度稳定性。A method to improve the stability of microwave wideband voltage controlled oscillators( VCO) was presented. The output port was from the resonance circuit in the VCO,and a matching circuit between the resonance circuit and the post buffer amplifier circuit was added,which improved the stability and the temperature characteristics of the VCO. A microwave wideband VCO chip was designed based on this circuit construction in Ga As HBT technology. The off-chip Ga As hyperabrupt and high Q value varactor diode were used to increase the working bandwidth and reduce the phase noise of the VCO.The test results of the wideband VCO chip show that the output frequency covers from 13 GHz to 19 GHz and the tuning linearity is less than or equal to 2. 5∶ 1 when the tuning voltage is 1. 5- 15 V,while the phase noise is- 89 d Bc / Hz@ 100 k Hz when the tuning voltage is 8 V. The supply voltage of the VCO is5 V,and its supply current is 65 m A. The output power for the 19 GHz frequency point at 85 ℃ drops only 2 d B compared with it at 25 ℃,which indicates that the VCO has good temperature stability.
关 键 词:宽带 压控振荡器(VCO) 匹配电路 稳定性 砷化镓异质结双极型晶体管
分 类 号:TN752[电子电信—电路与系统]
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