WBG功率器件及其在弧焊逆变器领域的应用  

Applications of wide bandgap power devices in arc welding inverter

作　　者：朱磊[1] 王振民[1] 

机构地区：[1]华南理工大学机械与汽车工程学院,广州市510640

出　　处：《焊接》2016年第7期14-16,21,共4页Welding & Joining

基　　金：国家自然科学基金项目(51375173);广东省科技计划项目(2013B011302006;2013B010402007;2014B010104002;2014B090901030);中央高校基本科研业务费培育项目(2015ZP039)

摘　　要：随着第一、二代半导体器件在材料本征能力方面的不足日益突显,第三代宽禁带半导体器件以其高频率、高耐压、高漂移度以及低电阻能等特性在逆变器领域得到了广泛的关注。介绍了宽禁带(WBG)半导体的发展和特性,对以Si C为代表的宽禁带功率器件在弧焊逆变器领域的应用优势进行分析,最后探讨了宽禁带功率器件应用于弧焊逆变器领域时面临的主要问题及对策。With the performance of the first and the second generation of semiconductor devices is approaching the theoretical limits of the material,the third-generation wide-bandgap semiconductor device with its higher switching frequency,higher voltage,lower conduction losses and other superior properties get a lot of attention in arc welding inverter. In this paper,the development and characteristics of the wide band gap( WBG) semiconductors was introduced; then,with Silicon Carbide( Si C) as the representative of the wide bandgap power device,its application advantages in arc welding inverter was analyzed. Lastly,the main problems and countermeasures of arc welding inverter using the wide bandgap power devices were discussed.

关 键 词：宽禁带半导体 功率器件 弧焊逆变器 碳化硅(SiC) 

分 类 号：TG434[金属学及工艺—焊接]