一种新型低暗计数率单光子雪崩二极管的设计与分析（英文）  

Design and analysis of a novel low dark count rate SPAD

作　　者：杨佳[1,2] 金湘亮[1,2] 杨红姣[1,2] 汤丽珍[1,2] 刘维辉[1,2] 

机构地区：[1]湘潭大学物理与光电工程学院,湖南湘潭411105 [2]湖南省微光电与系统集成实验室,湖南湘潭411105

出　　处：《红外与毫米波学报》2016年第4期394-397,共4页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61233010,61274043);Hunan Provincial Natural Science Fund for Distinguished Young Scholars(2015JJ1014)

摘　　要：基于0.18μm互补金属氧化物半导体(CMOS)图像传感器工艺提出一种新型的低暗计数率(Dark Count Rate)单光子雪崩二极管(SPAD)器件.该器件是利用P+/LNW(Light N-well doping)结检测光子,并通过低浓度的N型扩散圆形保护环抑制边缘击穿,确保其工作在盖格模式.测试结果表明在室温环境下,直径为8μm的SPAD器件,雪崩击穿电压为14.2 V,当过调电压设置为2 V时,暗计数率为260 Hz,具有低的暗计数率特性.A novel low dark count rate single-photon avalanche diode （SPAD） device was designed and fabricated with the 0.18 μm CMOS Image Sensor （CIS） technology in this paper. The device is comprised of an effective P ＋/LNW （light N-well doping） junction for photon detecting and a low concentration N-type diffusing circular guard-ring formed by the deep N-well diffusion. The latter prevents premature edge breakdown （PEB） of the junction and ensures it to operate in Geiger mode. The measured results show that the SPAD achieves a low dark count rate （DCR）, and the DCR is 260 Hz at an excess bias voltage of 2V for 8 μm diameter active area structure at room temperature.

关 键 词：单光子雪崩二极管(SPAD) 边缘击穿(PEB) 互补金属氧化物半导体(CMOS) 

分 类 号：TN313[电子电信—物理电子学]