占空比对铌表面熔盐脉冲电沉积渗硅的影响  

Effect of Duty Cycle on Siliconizing on Niobium by Molten Salt Pulse Electrodeposition

作　　者：王雁利 杨海丽[1] 吴晔康 徐宏[1] 王心悦[1] 冯策[1] 

机构地区：[1]华北理工大学冶金与能源学院现代冶金技术教育部重点实验室,河北唐山063009

出　　处：《热加工工艺》2016年第16期115-118,共4页Hot Working Technology

基　　金：河北省自然科学基金资助项目(E2014209275)

摘　　要：采用熔盐脉冲电沉积方法在纯铌表面制备出渗硅层。研究了占空比对渗硅层成分、沉积速率、组织和相结构的影响,并考察了渗硅层的高温抗氧化性。结果表明,渗硅层成分不受占空比影响。随占空比的增大,渗硅层晶粒由细小变得粗大,渗硅层组织致密、平整。占空比对渗硅层相结构无影响,均由单相Nb Si2组成,并在(110)和(200)晶面上具有择优取向。Nb Si2渗硅层使得纯铌的高温抗氧化性能得以提高。The siliconized layer was prepared on pure niobium surface with molten salt by pulse electrodeposition method. The effects of duty cycle on the siliconized layers＇ composition, deposition rate, structure and phase were studied. Meanwhile, the oxidation resistance of siliconized layer at high temperature was investigated. The results show that the composition of the siliconized layer is not affected by duty cycle. The deposition rate decreases as duty cycle increasing. The grain size of siliconized layer becomes bigger with the increase of duty cycle. The siliconized layer has a compact and smooth morphology. The phase structure of siliconized layer is not influenced by duty cycle and all the silieonized layers consist of single-phase NbSi2 and with （110） and （200） preferred orientation. The high-temperature oxidation resistance of pure niobium is improved by NbSi2 siliconized layer.

关 键 词：占空比 铌 熔盐脉冲电沉积 渗硅 

分 类 号：TG146.416[一般工业技术—材料科学与工程]