一种GaN FET开关用高压高速驱动器的设计与实现  

Design and Implementation of a High Voltage and High Speed GaN FET Switch Driver

作　　者：王子青[1] 廖斌[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第9期674-678,共5页Semiconductor Technology

摘　　要：设计了一种GaN场效应晶体管(FET)开关用高压高速驱动器电路,该电路集成了TTL输入级、高压电平转换级及大功率输出级电路,其主要功能是对输入的TTL信号进行电平转换,输出0 V/负高压信号。输入级采用施密特结构实现输入兼容TTL信号的同时提高了输入噪声容限,电平转换级、输出级对传统电路结构做了改进,转换速度更快,功耗更低。该电路采用标准硅基高压CMOS工艺制造流片,芯片测试结果表明,负电源工作电压为-5^-40 V,静态电流小于10μA,动态电流为5 m A@10 MHz,传输延时小于20 ns。芯片尺寸为1.42 mm×1.83 mm。该电路具有响应速度快、功耗低以及抗噪声能力强等特点,可广泛应用于微波通信系统中。A high voltage and high speed GaN field effect transistor （FET） switch driver was de- veloped, which consisted of TTL input-stage, high-voltage level shifter and high-power output circuit. This circuit could convert the input TTL signals to 0 V/negative high-voltage signals. The input stage cir- cuit used Schmitt structure to be compatible with TTL signal and increase the input noise tolerance, while the level shifter and output stage improved the conventional circuit structures to get faster transition rate and lower power dissipation. Using standard Si-CMOS high-voltage process, the measurement results show that the chip could work well with negative supply voltage from -5 V to -40 V, consuming less than 10 μA static current in while 5 mA dynamic current and less than 20 ns transmission delay in switch state with switch frequency of 10 MHz. The final chip area is 1.42 mm× 1.83 mm. The circuit can be widely used in microwave communication system for the characteristics of fast response, low power com- sumption and strong anti noise ability.

关 键 词：Ga N场效应晶体管(FET)开关 高压驱动器 施密特电路 电平转换 死区时间 

分 类 号：TN432[电子电信—微电子学与固体电子学]