原子层沉积铜薄膜研究进展  

Latest Progress in Growth of Copper Thin Film by Atomic Layer Deposition

作　　者：郭群[1] 国政[1] 桑利军[1] 王安玲[1] 田旭[1] 杨丽珍[1] 刘忠伟[1] 

机构地区：[1]北京印刷学院印刷包装材料与技术北京市重点实验室等离子体物理与材料研究室,北京102600

出　　处：《真空科学与技术学报》2016年第8期856-861,共6页Chinese Journal of Vacuum Science and Technology

基　　金：北京市自然科学基金项目(4162024);北京市属高等学校高层次人才引进与培养计划项目(CIT&TCD201404130);北京市教育委员会科技计划面上项目(KM201510015002;KM201510015009);2015北京市本科生科学研究计划项目资助(201601002)

摘　　要：微电子领域中的铜互连工艺需要沉积一层连续且保形好的铜籽晶层,随着集成电路中特征尺寸的减小及沟槽深宽比的增加,传统的热沉积工艺难以满足其将来的制作要求。本文介绍了使用新的强还原剂前驱体沉积铜金属工艺的研究进展,重点综述了利用氢气等离子体辅助原子层沉积铜薄膜工艺的研究现状,概述了应用各类铜前驱体进行铜薄膜沉积的参数及所制备铜薄膜的性能,总结了各工艺的优缺点。The latest advance in low temperature growth of copper thin films by atomic layer deposition（ ALD）,infabrication of copper interconnects of integrated circuit chips with decreasing feature size and increasing aspect ratio,was tentatively discussed. The discussion focused on： i） the novel technologies in deposition of copper films with strong reductant precursor by hydrogen plasma enhanced atomic layer deposition（ PEALD）; ii） the strengths and weaknesses of the ALD Cu-film growth techniques with different precursors; iii） the positive impact of the plasma on the growth of copper film,such as lowering the growth temperature via reducing the hydrogenation reactivity of the ligands and improving the uniformity of the copper films by restricting copper atom conglomeration.The extensive efforts in searching for the new Cu precursors,with strong low-temperature reactivity and with high saturated vapor pressure to improve the uniformity of PEALD Cu-film,were also briefly discussed.

关 键 词：铜籽晶层 原子层沉积 低温 等离子体 

分 类 号：TB34[一般工业技术—材料科学与工程]