镓掺杂对二氧化钛薄膜光吸收性能的影响  

Effect of Ga Doping on Optical Absorption Property of TiO_2 Thin Films

作　　者：邓泉荣[1] 李义奇[1] 陈恋[1] 王升高[1] 王戈明[1] 

机构地区：[1]武汉工程大学材料科学与工程学院,湖北省等离子体化学与新材料重点实验室,武汉430074

出　　处：《人工晶体学报》2016年第8期2156-2159,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51442003,11504277,51072140,51272178);湖北省教育厅中青年人才项目(Q20151502);湖北省科技厅青年基金(2015CFB229)

摘　　要：通过向TiO2粉体中加入质量分数为1%-15%的Ga2O3粉末,制备了Ga掺杂的TiO2陶瓷靶,并采用脉冲激光沉积法（PLD）用陶瓷靶制备出TiO2薄膜,将薄膜于800-1000℃下退火。对薄膜结构和光学性质的研究表明1000℃退火条件下浓度为1%Ga2O3掺杂能有效将金红石相TiO2的禁带宽度减小至2.62 eV,使其吸收边红移动至470 nm。Ga-doped TiO2 target was synthesized through adding 1 % -15% Ga2O3 into TiO2 powder, and then Ga doped TiO2 thin films were fabricated by pulsed laser deposition technique with the home made Ga-doped TiO2 target and annealed at 800-1000 ℃. The research on the microstructure and optical absorption properties of the thin films suggests that 1 % Ga2O3 doping can effectively narrow the band gap of rutile TiO2 to 2. 62 eV when annealed at 1000℃ , and thereby red-shift the absorption edge to 470nm

关 键 词：TIO2薄膜 脉冲激光沉积 Ga掺杂 可见光吸收 

分 类 号：O484.1[理学—固体物理]