Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Memory Device  

作　　者：Bin Liu Yan Bao Hai-feng Ling Wen-sai Zhu Rui-jun Gong Jin-yi Lin 解令海 仪明东 黄维 

机构地区：[1]Centre for Molecular Systems and Organic Devices, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China [2]Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China

出　　处：《Chinese Journal of Polymer Science》2016年第10期1183-1195,共13页高分子科学（英文版）

基　　金：financially supported by the National Natural Science Funds for Excellent Young Scholar (No.21322402);the National Natural Science Foundation of China (Nos.21274064, 61475074, 21504041 and 61136003);University of Jiangsu Province Natural Science Foundation Project (No.14KJB510027);Natural Science Foundation of Jiangsu Province (No.BM2012010);Synergetic Innovation Center for Organic Electronics and Information Displays;Natural Science of the Education Committee of Jiangsu Province (No.15KJB430019);Jiangsu Planned Projects for Postdoctoral Research Funds (No.1501019B)

摘　　要：Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.

关 键 词：p-n copolyfluorenes Fluorine atom Direct aromatization Polymer dielectric Transistor memory. 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O631[自动化与计算机技术—计算机科学与技术]