Pattern dependence in synergistic effects of total dose on single-event upset hardness  

作　　者：郭红霞 丁李利 肖尧 张凤祁 罗尹虹 赵雯 王园明 

机构地区：[1]State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology

出　　处：《Chinese Physics B》2016年第9期463-467,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.U1532261)

摘　　要：The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory（SRAM） circuit.Experiments were performed under two SEU test environments：3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory（SRAM） circuit.Experiments were performed under two SEU test environments：3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.

关 键 词：pattern dependence total dose single event upset（SEU） static random access memory（SRAM） 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]