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作 者:赵博超 卢阳 韩文哲 郑佳欣 张恒爽 马佩军 马晓华 郝跃
机构地区:[1]School of Microelectronics, Xidian University, Xi'an 710071, China [2]School of Advanced material and Nanotechnology, Xidian University, Xi'an 710071, China
出 处:《Chinese Physics B》2016年第9期528-532,共5页中国物理B(英文版)
基 金:Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
摘 要:An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor(HEMT).The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency(PAE),which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor(HEMT).The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency(PAE),which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
关 键 词:GaN internally-matched power amplifier inverse class-F compensation design X-band power amplifier
分 类 号:TN722.75[电子电信—电路与系统] TN958
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