电子辐照下GaAs/Ge太阳电池性能退化机制  

Performance degradation mechanism of GaAs/Ge solar cells under electron irradiation

作　　者：盛延辉 齐佳红 胡建民[1] 张子锐[1] 王月媛[1] 

机构地区：[1]哈尔滨师范大学光电带隙材料教育部重点实验室物理与电子工程学院,黑龙江哈尔滨150025

出　　处：《电源技术》2016年第8期1651-1652,1672,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金项目(11075043);黑龙江省教育厅科学技术研究项目(12541233);黑龙江省高等教育教学改革项目(JG2013010361)

摘　　要：通过空间带电粒子辐照地面等效模拟实验得到1 Me V和1.8 Me V电子辐照下GaAs/Ge太阳电池电学性能退化规律。根据太阳电池电学参数退化模型,对太阳电池短路电流退化曲线进行非线性分析,建立空间GaAs/Ge太阳电池少数载流子扩散长度损伤系数随入射电子能量变化的基本规律。结果表明,少数载流子扩散长度损伤系数随入射电子能量的增高而增大,这与短路电流退化幅度随电子能量变化规律一致。The basic rules of GaAs/Ge solar cells degraded electrical parameters under 1 MeV and 1.8 MeV electrons irradiation were obtained through the accelerating ground equivalent simulation test for space charged particles. Nonlinearity of short-circuit current degradation curves of the solar cells was analyzed by its mathematical model. The change laws of minority carriers＇ diffusion length damage coefficient of space solar cells with the incident electrons energy were established. The results show that the minority carders＇ diffusion length damage coefficient is one of the main reasons for short-circuit current degradation; short-circuit current degradation amplitude increases with the increase of the electron energy degradation.

关 键 词：GAAS太阳电池 辐照损伤模型 少数载流子扩散长度 

分 类 号：TM914[电气工程—电力电子与电力传动]