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机构地区:[1]School of Information and Engineering, Shenyang University of Chemical Technology [2]School of Information Science and Engineering, Shenyang University of Technology
出 处:《Journal of Semiconductors》2016年第8期10-14,共5页半导体学报(英文版)
基 金:supported by the National Natural Science Foundation of China(No.61372019)
摘 要:In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11,π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results.In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11,π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results.
关 键 词:piezoresistance coefficient polysilicon nanofilm tunneling piezoresistance model p-type polysilicon
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