A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate  

作　　者：贾艳 陈宏 谭骥 卢烁今 朱阳军 

机构地区：[1]Jiangsu R&D Center for lnternet of Things, Wuxi 214135, China [2]Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [3]Junshine CAS-IGBT Technology Co., Ltd, Wuxi 214135, China

出　　处：《Journal of Semiconductors》2016年第8期55-59,共5页半导体学报（英文版）

基　　金：supported by the National Major Science and Technology Special Project of China(No.2013ZX02305005-002);the Major Program of the National Natural Science Foundation of China(No.51490681)

摘　　要：A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ- CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V （13%） and a reduction of turn-off switching loss by approximately 15%.A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the electric distribution in the forward-blocking mode to achieve a higher breakdown voltage compared to the conventional CSTBT. Also, the p-pillar can act as a hole collector at turn-off, which significantly enhances the turn-off speed and obtains a lower turn-off switching loss. Although the turn-off switching loss decreases as the depth of the p-pillar increases, there is no need for a very deep p-pillar. The associated voltage overshoot at turn-off increases dramatically with increasing the depth of p-pillar, which may cause destruction of the devices. Plus, this will add difficulty and cost to the manufacturing process of this new structure. Therefore, the proposed SemiSJ- CSTBT offers considerably better robustness compared to the conventional CSTBT and SJ-CSTBT. The simulation results show that the SemiSJ-CSTBT exhibits an increase in breakdown voltage by 160 V （13%） and a reduction of turn-off switching loss by approximately 15%.

关 键 词：CSTBT high breakdown voltage p-pillar SemiSJ-CSTBT turn-off switching loss 

分 类 号：TN32[电子电信—物理电子学]