BESⅢ升级中硅像素径迹室位置校准的MC研究  

A MC Study of Alignment Method for the Silicon Pixel Tracker Alignment in the Upgrade of the BESⅢ

作　　者：付婷婷[1] 伍灵慧[2] 张晋[2] 王亮亮[2] 袁野[2] 张瑶[2] 李明非[1] 刘怀民[2] 

机构地区：[1]东北师范大学,长春130024 [2]中国科学院高能物理研究所,北京100049

出　　处：《核电子学与探测技术》2016年第4期416-419,429,共5页Nuclear Electronics & Detection Technology

基　　金：国家重点基础研究(2015CB856700);国家自然科学基金(11575222,U1232201,11205184)资助

摘　　要：硅像素径迹室是BESⅢ升级项目之一,离线软件校准是其离线数据处理系统的重要组成部分,研究过程采用蒙特卡罗方法,将残差法应用于漂移室升级项目中硅像素径迹室的几何位置校准,分别以ladder、芯片为最小探测单元进行研究,结果表明,该方法可有效应用于硅像素径迹室的位置校准。Silicon pixel tracker is a candidate for the upgrade of the BESIII inner drift chamber. Offline align- ment is an important part of its offline data process. Monte Carlo simulation is carried out in the study. The re- sidual method is applied in the alignment of the updated silicon pixel inner tracker. The ladder and the chip as the minimum detection unit are studied. Results of the study show that the method is effective to align the sili- con pixel inner tracker.

关 键 词：硅像素径迹室 漂移室 校准 残差法 

分 类 号：TL817[核科学技术—核技术及应用]