氧化钍的掺杂方式对碳化钍钨阴极微观组织与力学性能的影响  

Effect of doping method of ThO_2 on the microstructure and mechanical properties of Th-W cathode carbonized

作　　者：葛春桥 王金淑[2] 朱惠冲 董丽然 

机构地区：[1]广东威特真空电子制造有限公司,广东佛山528311 [2]北京工业大学材料科学与工程学院,北京100022 [3]佛山宁宇科技股份有限公司,广东佛山528300

出　　处：《粉末冶金技术》2016年第4期254-257,共4页Powder Metallurgy Technology

基　　金：广东省省级科技计划项目(2013B090500083)

摘　　要：以固-固与液-固两种掺杂方式研究了氧化钍掺杂对碳化钍钨阴极微观组织与力学性能的影响。利用SEM、EDS与金相显微镜分析了碳化钍钨的显微组织,并用静压力计与冲击试验台测试了两种碳化钍钨阴极的力学性能。研究结果表明,氧化钍的液-固掺杂后钨基体中氧化钍分布的均匀性优于固-固掺杂,且碳化后钍钨阴极的晶粒尺寸明显小于固-固掺杂,抗冲击能量与静压强度均高于固-固掺杂的钍钨阴极。Effect of doping method of ThO2 on the microstructure and mechanical properties of Th-W cathode carbonized were studied by solid - solid and liquid-solid doping ways. The microstructure of Th-W cathode carbonized was analyzed by SEM ,EDS and microscope, and mechanical properties of Th-W cathode carbonized were measured by static pressure gauge and impact tester. The results show that uniformity of ThO2 by liquid-solid doping is better than by solid-solid doping, and the grain size of Th-W cathode carbonized by liquid-solid doping is significantly smaller, compared with the grain size by solid-solid doping. Static strength and anti-impact energy of Th-W cathode are higher than Th-W cathode by solid - solid doping.

关 键 词：热电子发射 掺杂 碳化钍钨 晶粒度 原子薄膜阴极 

分 类 号：TG146.21[一般工业技术—材料科学与工程]