Scaling relation of domain competition on(2+1)-dimensional ballistic deposition model with surface diffusion  

作　　者：Kenyu Osada Hiroyasu Katsuno Toshiharu Irisawa Yukio Saito 

机构地区：[1]Department of Physics, Gakushuin University [2]Computer Centre, Gakushuin University [3]Department of Physical Science, Ritsumeikan University [4]Department of Physics, Keio University

出　　处：《Journal of Semiconductors》2016年第9期12-17,共6页半导体学报（英文版）

摘　　要：During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops growing.The number density of active domains ρ decreases as the height h increases.A simple scaling argument leads to a scaling law of ρ~ h^（-γ） with a coarsening exponent γ=d/z,where d is the dimension of the substrate surface and z the dynamic exponent of a growth front.This scaling relation is confirmed by performing kinetic Monte Carlo simulations of the ballistic deposition model on a two-dimensional（d=2） surface,even when an isolated deposited particle diffuses on a crystal surface.During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops growing.The number density of active domains ρ decreases as the height h increases.A simple scaling argument leads to a scaling law of ρ~ h^（-γ） with a coarsening exponent γ=d/z,where d is the dimension of the substrate surface and z the dynamic exponent of a growth front.This scaling relation is confirmed by performing kinetic Monte Carlo simulations of the ballistic deposition model on a two-dimensional（d=2） surface,even when an isolated deposited particle diffuses on a crystal surface.

关 键 词：domain competition ballistic deposition model Kardar-Parisi-Zhang universality class surface diffusion 

分 类 号：O78[理学—晶体学]