Vertical-dual-source tunnel FETs with steeper subthreshold swing  

作　　者：蒋智 庄奕琪 李聪 王萍 刘予琪 

机构地区：[1]School of Microelectronic, Xidian University

出　　处：《Journal of Semiconductors》2016年第9期69-75,共7页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61204092,61574109)

摘　　要：In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling area and thinner channel, showing an on-current as high as 1.24 A at gate voltage of 0.8 V and drain voltage of 0.5 V, off-current of less than 0.1 f A, an improved average subthreshold swing of 14 m V/dec,and a minimum point slope of 4 m V/dec.In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling area and thinner channel, showing an on-current as high as 1.24 A at gate voltage of 0.8 V and drain voltage of 0.5 V, off-current of less than 0.1 f A, an improved average subthreshold swing of 14 m V/dec,and a minimum point slope of 4 m V/dec.

关 键 词：dual source regions and U-shape-gate tunneling field-effect transistor subthreshold swing band-toband tunneling on-state current 

分 类 号：TN386[电子电信—物理电子学] TN402