一种反向多结GaAs太阳电池背反射器的研究  

Research on back reflector for reverse multi-junction GaAs solar cell

作　　者：刘丽蕊 薛超[1] 石磷 姜明序[1] 张吴迪 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2016年第9期1788-1789,1807,共3页Chinese Journal of Power Sources

摘　　要：介绍了一种具有全方位反射器的GaAs太阳电池的制作方法;分析了GaAs太阳电池全方位反射器制备工艺,在GaAs外延上生长全方位反射器ODR,即生长一层介质层,再在介质层上用黄光工艺进行开孔;并在介质层上使用蒸镀工艺蒸镀金属层。通过蒸镀、键合、衬底腐蚀、栅线、背电极制作等工艺完成电池制作。介绍了ODR结构的设计及工艺,并对比了实验结果。The preparation method of thin film GaAs solar cells was introduced. The ODR fabrication process of thin film GaAs solar cells was analyzed. A dielectric layer was deposited on the substrate, and then the hole was made using the technology of yellow. The metal was deposited on the dielectric. The solar cell was completed by depositing metal, bonding and substrate corrosion technology. The architecture design and process of ODR were introduced, and the experimental results were compared.

关 键 词：全方位反射器 反向 GAAS太阳电池 

分 类 号：TM911[电气工程—电力电子与电力传动]