磷对Al-70%Si合金初生硅生长方式的影响  

Effect of Phosphorus on the Growth Mode of Primary Silicon in Al-70%Si Alloy

作　　者：坚增运[1] 严军辉[1] 朱满[1] 常芳娥[1] 薛改勤 J IAN Zengyun YAN Junhui ZHU Man CHANG Fange XUE Gaiqin(Shaanxi Province Key Laboratory of Photoelectric Functional Materials and Devices, Xi ＇an Technological University, Xi＇an 710021, China)

机构地区：[1]西安工业大学陕西省光电功能材料与器件重点实验室,西安710021

出　　处：《西安工业大学学报》2016年第8期657-664,共8页Journal of Xi’an Technological University

基　　金：国家自然科学基金(51171136;51301125;51401156;51371133);国家重点基础研究发展计划资助项目(2011CB610403)

摘　　要：为了探究磷元素对初生硅生长的影响和磷元素的变质机理,通过电磁悬浮熔炼设备对加入磷元素的Al-70%Si合金进行了深过冷处理,使用高速摄影仪记录了Al-70%Si合金熔体凝固过程中的动态画面,采用扫面电镜分析了凝固后的试样表面形貌.实验结果表明:加入磷元素后,初生硅依然具有三种生长方式:小平面生长、中间方式生长和非小平面生长;磷元素可以明显地改变三种生长方式之间转变的临界过冷度;当磷的加入量为0.5%时,初生硅由小平面生长过渡到中间方式生长的临界过冷度ΔT1为92K,由中间方式生长过渡到非小平面生长的临界过冷度ΔT2为206K;当磷的加入量为1.0%时,相应的临界过冷度ΔT1和ΔT2分别为56K和179K.In order to explore the effect of phosphorus element on the primary silicon,and understand the modification mechanism of phosphorus element,Al-70%Si alloys of different amount of phosphorus element were undercooled by an electromagnetic levitator（EML）.Spherical samples with different undercooling were obtained.Their morphologies during and after solidification were observed by a highspeed camera（HSC）and a scanning electron microscope（SEM）.The result shows：The primary silicon also has three growth mode-faceted,intermediate and non-faceted mode after adding phosphorus element.Phosphorus element obviously changes the critical undercooling of transition among three growth mode.When adding 0.5% phosphorus element,the critical undercooling for primary silicon to grow from faceted mode to intermediate modeΔT1and from intermediate mode to non-faceted modeΔT2are 92 K and 206 K,respectively.When the addition amount is 1.0%,the corresponding critical undercooling is 56 Kand 179K.

关 键 词：电磁悬浮 生长方式 初生SI 临界过冷度 

分 类 号：TG146.21[一般工业技术—材料科学与工程]