溅射温度对Love波器件ZnO波导层性能的影响  

Effect of the Sputtering Temperature on the Performances of the ZnO Waveguide Layer in the Love Wave Device

作　　者：文常保[1] 马跃[1] 马琼[1] 姜燕妮[1] 李演明[1] 巨永锋[1] 

机构地区：[1]长安大学电子与控制工程学院微纳电子研究所,西安710064

出　　处：《微纳电子技术》2016年第10期691-695,701,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60806043);陕西省自然科学基础研究计划资助项目(2015JM6271);中央高校教育教学改革专项经费资助项目(jgy16017;jgy16096)

摘　　要：为了研究射频磁控溅射温度对Love波器件ZnO波导层的影响机理,在溅射温度分别为25,50,100,150和200℃、本征真空度为4.0×10^-4 Pa、溅射气压为5.4 Pa、溅射时间为400 min条件下,制备了一组具有ZnO波导层的Love波器件。使用X射线衍射仪对ZnO波导层的结晶取向和微观结构进行分析,并用网络分析仪对以ZnO为波导层的Love波器件进行响应特性分析。测试结果表明：在25～150℃,随着溅射温度的升高,ZnO波导层的（002）择优取向变高,平均晶粒尺寸增大,内应力减小。当溅射温度大于150℃时,ZnO波导层的（002）择优取向变低,平均晶粒尺寸减小,内应力增大。与其他溅射温度相比,150℃下制备的ZnO波导层的（002）择优取向最好,平均晶粒尺寸最大（53.36 nm）,内应力最小。150℃下制备的Love波器件插入损耗最小（17.7 dB）,响应特性最好。In order to study the influence mechanism of the temperature of the radio frequency magnetron sputtering on the ZnO waveguide layer of Love wave device,the Love wave device with the ZnO waveguide layer was prepared at the sputtering temperatures of 25,50,100,150 and 200 ℃,the intrinsic vacuum degree of 4.0×10^-4Pa,the sputtering pressure of 5.4 Pa and the sputtering time of 400 min.The crystallographic orientation and microstructure of the ZnO waveguide layer were analyzed by X-ray diffractometer,and the response characteristics of the Love wave device with the ZnO waveguide layer were analyzed by the network analyzer.The experimental results show that the（002）preferred orientation of the ZnO waveguide layer becomes higher with the increase of the sputtering temperature from25 ℃to 150 ℃,meanwhile the average grain size increases and the internal stress decreases.When the sputtering temperature is greater than 150 ℃,the（002）preferred orientation of the ZnO waveguide layer gets lower,the average grain size decreases and the internal stress increases.Compared with other sputtering temperatures,the（002）preferred orientation of the ZnO waveguide layer prepared at 150 ℃is the best,the average grain size is the largest（53.36 nm）and the internal stress is minimum.The insertion loss of the Love wave device prepared at 150℃is minimum（17.7 dB）and the response characteristic is the best.

关 键 词：Love波器件 波导层 溅射温度 ZNO 微观结构 

分 类 号：TN64[电子电信—电路与系统] TN304.21