Gd掺杂对CaCu_3Ti_4O_(12)陶瓷材料压敏性能的影响  

Effect of Gd doping on non-ohmic properties of CaCu_3Ti_4O_(12) ceramics

作　　者：谢新宇[1] 项会雯 陈镇平[1] 李涛[1] 陈书林[1] 刘永伟[1] 刘鑫[1] 

机构地区：[1]郑州轻工业学院物理与电子工程学院,河南郑州450002 [2]郑州工业应用技术学院基础教程学部,河南郑州451100

出　　处：《电子元件与材料》2016年第10期20-24,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.11175159)

摘　　要：采用固相法制备了Ca_（1-x）Gdx_Cu_3Ti_4O_（12）（x=0～0.09）陶瓷系列样品,利用X射线衍射、Raman光谱和正电子湮没等技术手段,对系列样品的微观结构、缺陷浓度进行测试和表征。结果表明,在整个掺杂范围内体系未发生结构相变,掺杂引起体系晶格膨胀、分子极化率增加;随Gd掺杂量x的增加,空位型缺陷增加。电性能测试结果表明,适量Gd掺杂（x=0.01）有利于改善体系的压敏性能,而过量Gd掺杂（x=0.07～0.09）会阻碍晶界势垒的形成,因而抑制体系的压敏性能。讨论了体系微观结构、空位型缺陷浓度及晶界势垒高度等因素对体系压敏性能的影响特征。The CaCu_3Ti_4O_（12） ceramics doped with various Gd （χ=0-0.09） contents were fabricated by traditional solid-state method. X-ray diffraction, Raman spectroscopy and positron annihilation technique were employed to investigate the microstructure and defect concentration of Gd doped CCTO systems. The results show that no phase t transition occurs in the range of doping content, but the lattice expansion and increases of molecular polarizability are induced by Gd additives. The results also display that the vacancy-type defect increases with the increasing of Gd doping content. The electrical performances test show that the non-ohmic property is improved by adding an appropriate amount of Gd additives （χ=0.01） but weakened by higher Gd content （χ=0.07-0.09）. The influences of microstructure, vacancy-type defect concentration and the grain boundary barrier height on the non-ohmic properties were also discussed.

关 键 词：Ca_(1-x)Gdx_Cu_3Ti_4O_(12)陶瓷 微观结构 分子极化 缺陷浓度 压敏性能 势垒高度 

分 类 号：TM28[一般工业技术—材料科学与工程]