Silicon-on-Insulator-Based Broadband 1×3 Adiabatic Splitter with Simultaneous Tapering of Velocity and Coupling  

作　　者：巩源浩 李智勇 余金中 俞育德 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2016年第9期39-42,共4页中国物理快报（英文版）

基　　金：Supported by the National High-Technology Research and Development Program of China under Grant Nos 2015AA016904and 2013AA014402;the National Basic Research Program of China under Grant No 2011CB301701;the National Natural Science Foundation of China under Grant No 61275065

摘　　要：We propose and experimentally demonstrate a broadband 1 × 3 adiabatic splitter based on the silicon-on-insulator technology, with simultaneous tapering of velocity and coupling. The designed structure becomes simulated transmission uniformity of three outputs better than 0.5dB in a broadband of 250nm, and a large simulated fabrication tolerance is obtained. A manufactured splitter whose parameters greatly diverge from the design acquires a measured result of the worst splitting ratio better than 1.5dB as well as an excess loss lower than 0.8 dB in a large wavelength range of 80nm. A post-simulation based on the tested splitter obtains a result that meets the actual transmission well.We propose and experimentally demonstrate a broadband 1 × 3 adiabatic splitter based on the silicon-on-insulator technology, with simultaneous tapering of velocity and coupling. The designed structure becomes simulated transmission uniformity of three outputs better than 0.5dB in a broadband of 250nm, and a large simulated fabrication tolerance is obtained. A manufactured splitter whose parameters greatly diverge from the design acquires a measured result of the worst splitting ratio better than 1.5dB as well as an excess loss lower than 0.8 dB in a large wavelength range of 80nm. A post-simulation based on the tested splitter obtains a result that meets the actual transmission well.

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分 类 号：TN25[电子电信—物理电子学] TN253