相变存储器材料研究  

Study of phase change materials for phase change random access memory

作　　者：吴良才[1] 宋志棠[1] 周夕淋[1] 饶峰[1] 封松林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《中国科学：物理学、力学、天文学》2016年第10期119-127,共9页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：中国科学院战略性先导科技专项(编号:XDA09020402);国家重点基础研究发展计划(编号:2011CBA00607;2011CBA00602);国家自然科学基金(编号:61076121)资助项目

摘　　要：作为下一代最具竞争力的新型存储技术之一,相变存储技术近十多年来得到突飞猛进的发展,相关产品已经问世并实现量产.伴随着相变存储技术本身的发展,与其相关的基础研究也是近年来信息、材料等相关领域的研究热点.基于硫系化合物材料的相变存储介质是相变存储器的基础和核心,相变材料的性能决定相变存储器的性能.本文简要介绍了相变存储器的产业化动态、总结了常用GeSbTe相变材料及其机理的主要理论研究结果、分析了传统GeSbTe相变材料的C掺杂改性及其相变机理.Phase change memory technology, which is regarded as one of the most promising candidates for the next generation non-volatile memory technology, has achieved rapid development in the past ten years. Meanwhile, related products based on this technology have been put into the market and mass production has come true. With the development of phase change memory technology, the fundamental research has become a hot topic in the fields of information, materials, and so on. Phase change storage medium based on chalcogenide is the basis and core of phase change memory. The performance of phase change memory is determined by phase change material＇s performance. In this paper, the industrialization status of phase change memory are briefly introduced firstly, then the research progress of the commonly used GeSbTe phase change materials and the main phase transition mechanism is summarized. Finally, the C doping modification of the traditional GeSbTe and the phase change mechanism of C-doped GeSbTe materials is analyzed.

关 键 词：相变存储器 GeSbTe 相变机理 C掺杂 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]