高效低开启电压CMOS整流电路设计  

Design of a High-Efficiency Low Turn-on Voltage CMOS Rectifier Circuit

作　　者：曹世华[1] 张慧熙[1] 安康[1] Cao Shihua Zhang Huixi An Kang(Qianjiang College, Hangzhou Normal University, Hangzhou 310036, China)

机构地区：[1]杭州师范大学钱江学院,杭州310036

出　　处：《半导体技术》2016年第10期736-739,745,共5页Semiconductor Technology

基　　金：浙江省科技厅公益技术社会发展项目(2011C33031);杭州市科委重点科技攻关项目(20140633B34);杭州市重点学科建设项目(201328B8)

摘　　要：基于Chartered 0.18μm标准CMOS工艺,设计了一种适用于无线传感器的高效低开启电压CMOS整流电路。为提高电路集成度,整流电路中的倍压模块采用了MOSFET代替肖特基二极管。整流电路中通常采用的Dickson结构倍压电路受体效应等的影响,单级电压增益降低;在多级Dickson结构的倍压电路中,增益随着级数的增加加剧恶化。设计的整流电路采用新型结构倍压电路有效抑制了体效应等的影响,从而使电压增益具有显著提升。电路管芯面积仅为0.095 mm×0.077 mm,芯片测试结果表明,在输入电压为6 d Bm V(2 m V)时能够稳定输出电压2.2 V的信号,功率转换率达55.6%。A high-efficiency low turn-on voltage CMOS rectifier was designed for wireless sensors based on Chartered 0. 18 μm CMOS process. For integration thinking,MOSFETs are adopted instead of Schottky diodes in the voltage-doubling module of the rectifier circuit. The Dickson-structure voltage-doubling circuit widely used in the rectifier circuits is influenced by the bulk effect,resulting in the reduction of single-stage voltage gain,and the gain of multistage doubling circuit exasperating with the increase of stages. The new-structure voltage-doubling circuit was adopted in the designed rectifier circuit,which effectively reduces the impact of bulk effect,thus significantly increasing the voltage gain. The circuit chip size is only 0. 095 mm × 0. 077 mm. The test results show that the 2. 2 V signal can be stably output when the input voltage is 6 d BmV（ 2 mV）,and the power conversion rate achieves 55. 6%.

关 键 词：整流电路 CMOS 功率转换效率 电荷泵 无线传感器 

分 类 号：TN432[电子电信—微电子学与固体电子学]