基于Hspice模型的非晶硅薄膜晶体管特征参数提取  

Extraction for Characteristic Parameters of Amorphous-Silicon Thin-Film Transistors Based on Hspice Model

作　　者：殷晓文 严利民[1] 龚露鸣 Yin Xiaowen Yan Limin Gong Luming(Microelectronics Research and Development Center, Shanghai University, Shanghai 200072, Chin)

机构地区：[1]上海大学微电子研究与开发中心,上海200072

出　　处：《半导体技术》2016年第10期746-750,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61376028)

摘　　要：非晶硅薄膜晶体管(TFT)作为各种主流显示设备的像素点驱动器件,应用在计算机、视频终端和通信等多个领域。对薄膜晶体管的特征参数提取是显示驱动电路设计的前提。归纳并讨论了非晶硅薄膜晶体管模型选择,综合了归一化方法和Hspice level=61 RPI模型,分离参数后线性提取了如阈值电压、场效应迁移特征电压、迁移率幂律参数、源漏电阻及饱和电压调制等特征参数。利用溶胶凝胶法制备了氢化铟锌氧化物(HIZO)作为有源层的薄膜晶体管,将实际测量曲线与仿真曲线进行研究比较,误差分析表明该方法能很好地拟合薄膜晶体管电学性能。Amorphous-silicon thin-film transistors（ TFTs） as display pixel drivers of mainstream devices are applied in a plurality of fields of computers,video terminals and communication,etc. Extraction for characteristic parameters of thin-film transistors is the premise of designing display drivers.The model selection of amorphous-silicon thin-film transistors which combines normalization method and Hspice level = 61 RPI model is summarized and discussed. Characteristic parameters including the threshold voltage,characteristic voltage of field effect mobility,mobility power law,source-drain resistance,saturation voltage modulation are linearly extracted after parameters separation. A thin-film transistor is manufactured through the sol-gel method which has hydrogenated indium zinc oxide（ HIZO） as the active layer. The actual measurement curve and simulation curve were comparatively studied. The error analysis shows that the parameter extraction method has good fit of TFT＇s electrical properties.

关 键 词：非晶硅 薄膜晶体管(TFT) 归一化方法 RPI模型 参数提取 

分 类 号：TN321.5[电子电信—物理电子学]