BNT-KBT-BT薄膜的制备及外场下电畴翻转  

Preparation and Domain Switching Under the External Field of BNT-KBT-BT Thin Films

作　　者：苏敏[1] 袁琪[1] 王伟[1] 詹科[1] 王现英[1] 祝元坤[1] 

机构地区：[1]上海理工大学材料科学与工程学院,上海200093

出　　处：《电子科技》2016年第10期136-139,143,共5页Electronic Science and Technology

摘　　要：采用金属有机物热分解法在Pt/Ti/Si O2/Si基底上制备了0.85(Bi0.5Na0.5)Ti O3-0.10(K0.5Bi0.5)Ti O3-0.05Ba Ti O3(85BNT-10KBT-5BT)薄膜。通过X射线衍射仪、扫描探针显微镜(SEM)、压电力显微镜(PFM)等对薄膜的结构和外场下的电畴演变进行了表征及研究。结果表明,该薄膜微观结构主要由钙钛矿相和少量的焦绿石相组成,表面无明显裂纹和孔洞,其最大压电系数d33=150 pm/V;通过PFM观察到在电场作用下,其电畴可实现180°翻转,在力场作用下其电畴可实现90°翻转,并结合微观结构对电畴在外场下的演变机理进行了研究。该研究为铁电薄膜在MEMS中的应用提供了参考。0.85（Bi0.5Na0.5）Ti O3-0.10（K0.5Bi0.5）Ti O3-0.05Ba TiO3, （85BNT-10BKT-5BT） thin films were prepared on Pt/Ti/SiO2/Si （100） suhstrate by the metal organic matter decomposition （MOD） method. The structure and domain switching behaviors under external fields of the thin film were characterized and analyzed by the X- ray diffraction, scanning probe microscope （SEM） and piezoelectric force microscope （PFM）. The results show the thin film was mainly with perovskite phase and little pyrochlore. It has a continuous surface without obvious holes. The largest piezoelectric coefficient of this film reaches 150 pm/V, and the 180 domain switching and 90 domain switching behaviors were observed by PFM under external electric field and applied force, respectively. Based on the microstrueture, the mechanism of domain switching behaviors is discussed. These results can provide useful information for the development and application of piezoelectric film in MEMS.

关 键 词：85BNT-10KBT-5BT薄膜 金属有机物热分解法 PFM 电畴翻转 压电性能 

分 类 号：TN384[电子电信—物理电子学] TM223[一般工业技术—材料科学与工程]