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作 者:王聪[1] 周学宏[1] 王蓉[1] 刘琳琳[1] 解增旗[1] 马於光[1] WANG Cong ZHOU Xue-hong WANG Rong LIU Lin-lin XIE Zeng-qi MA Yu-guang(State Key Laboratory of Luminescent Material and Devices ,South China University of Technology Institute of material South China University of Technology ,Guangzhou 510641 ,China)
机构地区:[1]华南理工大学发光材料与器件国家重点实验室华南理工大学材料学院,广州510641
出 处:《光散射学报》2016年第3期195-202,共8页The Journal of Light Scattering
基 金:国家自然科学基金(51303057;91233113;21334002;51373054;51473052;21174042);科技部973计划(2013CB834705;2015CB655003);中央高校业务费(2015ZZ010);广东省创新团队(201101C0105067115)
摘 要:拉曼原位表征(Raman in situ characterization)就是在不破坏样品的情况下利用拉曼光谱实时监测变化过程,以表征样品在真实环境下的结构性能变化或记录样品在整个过程中的实时信息。在器件的工作时,原位检测化学结构、物理结构的变化,有利于深入了解器件微观结构与光电性能间的关系,帮助我们优化器件结构,提高器件性能。本文主要针对有机光电器件,总结原位观察生长、老化、带电状态的特点和规律,探讨了原位拉曼光谱在有机光电器件原位表征中的应用和发展潜力。Raman in situ characterization refers monitoring the process using Raman spectroscopy without destroying the sample in real time,and then characterizes the structure and performance change on site orrecord the real-time information throughout the process.Under operating conditions of the devices,examining the chemical and physical structure changes exactly in place where it occurs,will help to insight the relationship between microstructure and photoelectric properties of devices,and then optimizes the structure to improve the performance.This review summarizes the in situ observation of film growth,degradation,charged state and their characteristics in organic optoelectronic devices,and finally makes a point on the applications and potentiality of in situ Raman spectroscopy in organic optoelectronic device.
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