Ho^(3+)掺杂Bi_4Si_3O_(12)晶体的生长与光谱特性  

Growth and Spectral Properties of Ho-doped Bi_4Si_3O_(12) Crystal

作　　者：温裕贤 张彦 储耀卿 杨波波 徐家跃 

机构地区：[1]上海应用技术大学材料科学与工程学院晶体生长研究所,上海201418

出　　处：《硅酸盐学报》2016年第10期1446-1450,共5页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51572175;51342007)

摘　　要：采用坩埚下降法生长了尺寸为f25 mm×100 mm的Ho^(3+)掺杂的Bi_4Si_3O_(12)(BSO:Ho)晶体,研究了所得晶体的透射光谱、激发光谱、发射光谱等特性。结果表明:BSO:Ho晶体透射光谱与纯BSO晶体基本一致,在350~800 nm波长范围的透过率约为80%,吸收边在286 nm处;在360、454和537 nm处存在与Ho^(3+)有关的吸收峰;激发光谱在240~310 nm波段出现1个宽的激发带,峰值在290 nm左右;发射光谱中除480 nm发射带外,在573 nm附近有多个与Ho^(3+)有关的尖锐发射峰。BSO:Ho晶体的主要发光分量的荧光衰减时间为94.41 ns,表明掺杂0.1%Ho^(3+)(摩尔分数)有利于提高BSO晶体的闪烁性能。Ho-doped Bi4Si3O12 （BSO：Ho） crystal with 25 mm in diameter and 100 mm in length was grown by a modified vertical Bridgman method. The transmission spectra, excitation spectra, emission spectra and decay time of the as-grown crystal were investigated. Similar to pure BSO, BSO：Ho crystal has excellent optical transmittance. It is approximately 80% at 350-800 nm with an absorption edge at 286 nm, and some absorption peaks are related to Ho^3＋ doping appeared in the spectrum. The excitation band is located at 240-310 nm with the maximum peak at 290 nm. In addition to the emission band at 480 nm, there are several intense emission peaks at 573 nm, which are attributed to Ho^3＋ doping. The fluorescence decay time for main lighting component of BSO：Ho crystal is 94.41 ns, it indicate doping 0.1% Ho^3＋ （mole fraction） will help improve scintillation performance of BSO crystals.

关 键 词：硅酸铋晶体 坩埚下降法 晶体生长 钬掺杂 光谱性能 

分 类 号：O782[理学—晶体学]