空穴注入层MoO_3厚度对蓝绿色磷光OLED发光特性的影响  

Influence of MoO_3 as material of hole-injection on photo-luminescence performance of the greenish-blue OLED

作　　者：陈维铅[1,2] 李增鹏[1] 李玉宏[1,2] 薛仰全[1,2] 林莉[1,2] 许世鹏[1,2] 

机构地区：[1]酒泉职业技术学院甘肃省太阳能发电系统工程重点实验,甘肃酒泉735000 [2]酒泉职业技术学院酒泉新能源研究院,甘肃酒泉735000

出　　处：《功能材料》2015年第B12期79-82,共4页Journal of Functional Materials

基　　金：甘肃省科技计划资助项目(1309RTSF043);甘肃省科技创新平台专项资助项目(144JTCF256)

摘　　要：以mCP为磷光主体材料,BGIr1为蓝绿色磷光掺杂材料,MoO3为空穴注入材料,制备5种不同厚度的MoO3蓝绿色磷光有机电致发光器件(OLED),并研究不同厚度MoO3空穴注入层对蓝绿色磷光OLED发光特性的影响。所制器件结构为ITO/MoO3(x nm)/NPB(40nm)/mCP∶BGIr1(30nm,18%)/BCP(10nm)/Alq3(20nm)/LiF(1nm)/Al(100nm),其中18%为发光层中BGIr1的掺杂量(质量分数),x为空穴注入层MoO3的厚度。研究结果表明,本实验制备器件空穴注入层MoO3的最佳厚度为20nm。当电压为13V时,MoO3厚度为20nm器件获得最大亮度为8 617cd/cm2,当电流密度为20mA/cm2时,器件获得最大发光效率为5.7cd/A。器件在488和512nm处获得两个主发射峰,发光颜色稳定,CIE坐标为(0.19,0.21)。The five greenish-blue phosphorescent organic light emitting device（OLED） with a series of MoO3 as materials of Hole injection were fabricated, mCP as host emitting material and BGIrl as doped material. The in fluence of MoO3 on the luminous performance of the OLED was investigated. The structure of as-prepared OLEDwaslTO/MoO3（x nm）/NPB（40 nm）/mCP ： BGIr1（30 nm, 18%）/BCP（10 nm）/Alq3（20 nm）/LiF （1 nm）/Al（100 nm）, where 18% was the doping content of BGIrl in emitting layer, x was the thickness of MoO3. The experimental results show that the best thickness of MoO3 as the hole-injection layer of the OLED was 20 nm. The optical luminance of 8 612 cd/cm2 was obtained for the OLED with 20 nm MoO3 at the voltage of 13 V, and the optical luminous efficiency of 5.2 cd/A was acquired at the current density of 20 mA/cm2. The two main emitting peaks were gained at 488 nm and 512 nm respectively, and the CIE coordinates was （0.19, 0.21）.

关 键 词：绿色磷光OLED 发光效率 空穴注入层 MOO3 

分 类 号：TN873.3[电子电信—信息与通信工程]