硅基AlGaInP发光二极管激光加工工艺研究  

Research on Laser Processing Technology of Silicon Substrate AlGaInP LED

作　　者：肖和平 陈亮 马祥柱 杨凯 

机构地区：[1]扬州乾照光电有限公司,江苏扬州225101

出　　处：《激光与光电子学进展》2016年第10期133-138,共6页Laser & Optoelectronics Progress

摘　　要：采用半导体激光器制备了硅基AlGaInP发光二极管,研究了激光能量密度、重复频率及平台加工速度对加工效果的影响,利用电子显微镜等测试工具分析了经激光加工后的硅基LED芯片表面和侧面形貌等结构特性,获得了较优的加工参数。With semiconductor laser, a silicon substrate A1GalnP LED is prepared, and the effects of laser energy density, repetition rate, and processing speed of the platform on the processing results are studied. By means of electron microscope and other test tools, the structural characteristics of the surface and side morphologies of silicon substrate A1GalnP LED chips are analyzed, and the superior processing parameters are obtained.

关 键 词：激光技术 LED芯片 固体激光器 激光加工 加工参数 

分 类 号：O434[机械工程—光学工程]