In2Se3／CuSe核壳结构微纳粉的合成及其喷涂热处理制备CuInSe2薄膜  

Synthesis of Core-shell Structure In_2Se_3/Cuse Micro/Nano-powders Followed by Coated-rapid Heating Treatment Method for Preparing CuInSe_2 Thin Films

作　　者：李斌[1] 李英莲[1] 莫淑一[1] 陈明光 王东生 龙飞[1] LI Bin LI Ying-Lian MO Shu-Yi CHEN Ming-Guang WANG Dong-Sheng LONG Fei(Guangxi Key Laboratory in Universities of Clean Metallurgy and Comprehensive Utilization for Non-ferrous Metals Re- sources, Key Laboratory of Nonferrous Materials and New Processing Technology of Ministry of Education, College of Mate- rials Science and Engineering, Guilin University of Technology, Guilin 541004, China Guangxi Dikai PV Energy Co., Ltd, Nanning 530003, China)

机构地区：[1]桂林理工大学材料科学与工程学院,有色金属材料及其加工新技术教育部重点实验室,广西高校有色金属清洁冶炼与综合利用重点实验室,桂林541004 [2]广西地凯光伏能源有限公司,南宁530003

出　　处：《无机材料学报》2016年第10期1135-1140,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(51372044);教育部“新世纪优秀人才支持计划”(NCET-12-0655)~~

摘　　要：分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In_2Se_3/CuSe粉体,研究不同方法制备In_2Se_3/CuSe粉体的物相、形貌,并利用涂覆–快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In_2Se_3+CuSe混合相的形式存在,高压溶剂热法合成的In_2Se_3/CuSe粉体则呈核壳结构,(以In_2Se_3为核,CuSe为壳)。涂覆–快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In_2Se_3/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 m V,Jsc为8 m A/cm^2。Different In2Se3/CuSe nano-powders were successfully fabricated by ultrasound and microwave sol- vothermal, atmospheric pressure, or high pressure solvothermal methods. Then the thin film solar cell absorbent layer was prepared through coated-rapid heating treatment system using above nano-powders. The phase, morphology and composition of the powders and CIS film were characterized by XRD, Raman, FESEM, and TEM. The results showed that the ultrasonic microwave solvothermal and atmospheric pressure solvothermal methods produced a mixture of InzSe3/CuSe. However, high pressure solvothermal method obtained core-shell structure In2Se3/CuSe powders （In2Se3-core, CuSe-shell）. In addition, FESEM analysis revealed that the In2Se3/CuSe powders prepared by high pressure solvotherrnal method were easier to produce smooth and dense CIS film. The fabricated CIS thin-film solar cell was demonstrated its photoelectric conversion property with open-circuit voltage of 50 mV and short-circuit cur- rent density of 8 mA/cm^2.

关 键 词：CIS 溶剂热法 In2Se3/CuSe 核壳结构 涂覆法 

分 类 号：TN304[电子电信—物理电子学]