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作 者:黄耀芹 郑国源[1] 莫淑一[1] 何丽秋 王东生 龙飞[1] HUANG Yao-Qin ZHENG Guo-Yuan MO Shu-Yi HE Li-Qiu WANG Dong-Sheng LONG Fei(Guangxi Key Laboratory in Universities of Clean Metallurgy and Comprehensive Utilization for Non-ferrous Metals Re- sources, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China Guangxi Dikai PV Energy Co., Ltd, Nanning 530003, China)
机构地区:[1]桂林理工大学材料科学与工程学院,广西高校有色金属清洁冶炼与综合利用重点实验室,桂林541004 [2]广西地凯光伏能源有限公司,南宁530003
出 处:《无机材料学报》2016年第10期1141-1146,共6页Journal of Inorganic Materials
基 金:广西自然科学基金(2014GXNSFFA118004);教育部“新世纪优秀人才支持计划”(NCET-12-0655)~~
摘 要:采用CuIn_(0.7)Ga_(0.3)Se_2、In_(0.7)Ga_(0.3)Se和CuSe为原料,一步热压烧结法制备CIGS靶材。通过阿基米德法、XRD、Raman、SEM和EDS等测试方法研究了CuSe液相辅助烧结对靶材的相对密度、物相组成、结构、形貌以及成份的影响。结果表明,加入CuSe在高温下产生液相能显著促进烧结,比不加入CuSe的体系的烧结温度下降了50℃。当烧结温度为575℃时,获得的靶材相对密度为96.18%,物相单一纯净,微观结构致密,晶粒发育良好。以摩尔比为Cu:In:Ga:Se=23.0:18.2:6.5:52.3的靶材,通过溅射–热处理法制备CIGS薄膜,并完成AZO/ZnO/CdS/CIGS/Mo单电池的组装(0.25 cm^2),获得了9.6%的光电转换效率。CIGS target was prepared by one step hot-pressing sintering using Culn0.7Ga0.3Se2, In0.7Ga0.3Se and CuSe as precursor powder. Archimedes method, XRD, Raman, SEM, and EDS were carried out to investigate the effects of liquid-assisted sintering on the relative density, phase, structure, morphology, and composition of CIGS target. The re- sults showed that CuSe would turn into liquid phase when temperature was increased to the liquid phase points. The liquid phase can significantly reduce sintering temperature (about 50℃ dropping) and accelerate the sintering process. When sintered at 575℃, the target can obtain the relative density of 96.18%, single phase, dense microstmcture with good grain growth. In addition, using the target with molar ratio ofCu : In : Ga : Se =23.0 : 18.2 : 6.5 : 52.3, CIGS thin films were also prepared by sputtering-heat treatment, followed assembled into AZO/ZnO/CdS/CIGS/Mo solar cell. The fabricated CIGS solar cells presented a photoelectric conversion efficiency of 9.6%.
分 类 号:TN304[电子电信—物理电子学]
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