大尺寸硅酸铋晶体的原料合成、晶体生长及闪烁性能研究（英文）  

Synthesis, Growth and Scintillation Properties of Large Size Bi_4Si_3O_(12) Crystals

作　　者：徐家跃 王杰 陈炜 肖学峰[1,2] 杨波波 王占勇 李飞[3] 谢会东[3] 

机构地区：[1]上海应用技术大学材料科学与工程学院,上海201418 [2]北方民族大学物理系,银川750021 [3]西安建筑科技大学理学院,西安710055

出　　处：《无机材料学报》2016年第10期1147-1150,共4页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(51342007,51572175)

摘　　要：以Si(OC_2H_5)_4和Bi(NO_3)_3·5H_2O作为前驱体、柠檬酸作为溶剂,按化学计量比配料,采用溶胶–凝胶法合成并经高温烧结制备了纯相Bi_4Si_3O_(12)多晶粉末,每批次可合成250 g。以此为原料、<001>取向BSO为籽晶,在坩埚下降炉内生长了BSO晶体,讨论了晶体的析晶行为,获得了30 mm×30 mm×210 mm的高质量BSO晶体。闪烁性能测试表明,该晶体能量分辨率为18.9%,光输出为同等条件下CSI(T1)晶体的7.2%。Using stoichiometric Si（OC2H5）4 and Bi（NO3）3·5H2O as precursors and citric acid as solvent, polycrystallineBi4Si3O12 （BSO） powders were synthesized by Sol-Gel method and sintered at high temperature. Batch production of250 g powders was realized. Using as-synthesized BSO powders and 〈001〉-oriented BSO seeds, BSO crystals weregrown in the vertical Bridgman furnace. The crystallization behavior was discussed and high quality BSO crystal up to30 mm× 30 mm× 210 mm was obtained. The scintillation characteristics of BSO single crystals were investigated.The energy resolution of the BSO crystal was 18.9% and the relative light yield of the crystal was 7.2% compared withCsI（T1） at the same conditions.

关 键 词：溶胶-凝胶法 硅酸铋晶体 坩埚下降法 晶体生长 闪烁性能 

分 类 号：TQ174[化学工程—陶瓷工业]