Optical properties of InN studied by spectroscopic ellipsometry  

作　　者：叶春芽 林伟 周瑾 李书平 陈荔 李恒 吴小璇 刘松青 康俊勇 

机构地区：[1]Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University

出　　处：《Journal of Semiconductors》2016年第10期16-20,共5页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China (No. 2012CB619301);the National High Technology Research and Development Program of China (No. 2014AA032608);the National Natural Science Foundation of China (Nos. 11204254, 11404271);the Fundamental Research Funds for the Central Universities (Nos. 2012121014, 20720150027)

摘　　要：With recently developed In N epitaxy via a controlling In bilayer, spectroscopic ellipsometry（SE） measurements had been carried out on the grown In N and the measured ellipsometric spectra were fitted with the Delta Psi2 software by using a suitable model and the dispersion rule. The thickness was measured by a scanning electron microscope（SEM）. Insight into the film quality of In N and the lattice constant were gained by X-ray diffraction（XRD）. By fitting the SE, the thickness of the In N film is consistent with that obtained by SEM cross-sectional thickness measurement. The optical bandgap of InN was put forward to be 1.05 e V, which conforms to the experimental results measured by the absorption spectrum and cathodoluminescence（CL）. The refractive index and the extinction coefficient of interest were represented for InN, which is useful to design optoelectronic devices.With recently developed In N epitaxy via a controlling In bilayer, spectroscopic ellipsometry（SE） measurements had been carried out on the grown In N and the measured ellipsometric spectra were fitted with the Delta Psi2 software by using a suitable model and the dispersion rule. The thickness was measured by a scanning electron microscope（SEM）. Insight into the film quality of In N and the lattice constant were gained by X-ray diffraction（XRD）. By fitting the SE, the thickness of the In N film is consistent with that obtained by SEM cross-sectional thickness measurement. The optical bandgap of InN was put forward to be 1.05 e V, which conforms to the experimental results measured by the absorption spectrum and cathodoluminescence（CL）. The refractive index and the extinction coefficient of interest were represented for InN, which is useful to design optoelectronic devices.

关 键 词：INN spectroscopic ellipsometry refractive index extinction coefficient 

分 类 号：TB302[一般工业技术—材料科学与工程]