Novel through-silicon vias for enhanced signal integrity in 3D integrated systems  

作　　者：方孺牛 孙新 缪旻 金玉丰 

机构地区：[1]National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing 100871, China [2]Academy of Information Science Innovation China Electronics Technology Group Corporation, Beijing 100016, China [3]Institute of Information Microsystem, Beijing Information Science & Technology University, Beijing 100010, China [4]Shenzhen Graduate School of Peking University, Shenzhen 518055, China

出　　处：《Journal of Semiconductors》2016年第10期93-98,共6页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China (No. 2015CB0572);the Importation and Development of HighCaliber Talents Project of Beijing Municipal Institutions (No. CIT&TCD20150320);the National Natural Science Foundation of China (No. 61176102)

摘　　要：In this paper, a new type of through-silicon via（TSV） for via-first process namely bare TSV, is proposed and analyzed with the aim of mitigating noise coupling problems in 3D integrated systems for advanced technology nodes. The bare TSVs have no insulation layers, and are divided into two types： bare signal TSVs and bare ground TSVs. First, by solving Poisson＇s equation for cylindrical P–N junctions, the bare signal TSVs are shown to be equivalent to conventional signal TSVs according to the simulation results. Then the bare ground TSV is proved to have improved noise-absorption capability when compared with a conventional ground TSV. Also, the proposed bare TSVs offer more advantages to circuits than other noise isolation methods, because the original circuit design,routing and placement can be retained after the application of the bare TSVs.In this paper, a new type of through-silicon via（TSV） for via-first process namely bare TSV, is proposed and analyzed with the aim of mitigating noise coupling problems in 3D integrated systems for advanced technology nodes. The bare TSVs have no insulation layers, and are divided into two types： bare signal TSVs and bare ground TSVs. First, by solving Poisson＇s equation for cylindrical P–N junctions, the bare signal TSVs are shown to be equivalent to conventional signal TSVs according to the simulation results. Then the bare ground TSV is proved to have improved noise-absorption capability when compared with a conventional ground TSV. Also, the proposed bare TSVs offer more advantages to circuits than other noise isolation methods, because the original circuit design,routing and placement can be retained after the application of the bare TSVs.

关 键 词：through-silicon-vias CROSSTALK MOS capacitance Poisson＇s equation 

分 类 号：TN405[电子电信—微电子学与固体电子学]