ZnS和SnS薄膜的制备和光电性质  

Photoelectrical Properties of ZnS and SnS Films

作　　者：尹国盛[1,2] 郭富强 孙健[2] 郑海务[2] Yin Guosheng Guo Fuqiang Sun Jian Zheng Haiwu(Zhengzhou University of Industrial Technology , Zhengzhou 451150, China School of Physics and Electronics , Henan University, Kaifeng 475004, Henan China)

机构地区：[1]郑州工业应用技术学院,郑州451150 [2]河南大学物理与电子学院,河南开封475004

出　　处：《河南科学》2016年第10期1662-1667,共6页Henan Science

基　　金：河南省科技发展计划基础与前沿技术研究项目(132300410142);河南省教师教育教改研究项目(2014-JSJYYB-008);郑州工业应用技术学院教改项目(JG-150029)

摘　　要：采用电刷镀技术在FTO导电玻璃上制备ZnS薄膜,通过XRD(X射线衍射)、UV-VIS-NIR(紫外近红外光谱仪)等技术对所制备的ZnS晶体的结构、形貌、组成和光学性质进行了表征.用同样的方法制备并表征了Sn S薄膜,在实验中通过对电解液的浓度、pH、电压、刷镀时间、干燥时间等不断进行改变和对比,用得到的最优条件能制备出均匀致密的薄膜.用XRD检测物相,用SEM观察其表面形貌,用紫外可见分光光度计测量了SnS薄膜的光吸收性能,估算了其间接带隙值.测量了SnS薄膜的光电性质,表明其具有较明显的光响应.Brush plating technique was adopted for thin ZnS films on FTO conducting substrates. The phase structures,microscopic morphologies and optical absorption property of ZnS crystals were characterized by XRD and UV-VIS-NIR respectively. Preparation and characterization of SnS film were conducted by almost the same method. By tuning the concentration of the electrolyte,pH value,brush plating voltage and time and drying time the optimal preparation condition was obtained. XRD and SEM were used to detect the purity and surface morphology of the samples,UV-Vis spectrometer was used to measure the optical absorption properties of the thin films and the indirect band gap values were estimated. Measurement of photoelectrical properties indicate the SnS film had obvious photoresponse characteristics.

关 键 词：ZNS SNS 薄膜 电刷镀法 太阳能电池 

分 类 号：O469[理学—凝聚态物理]