磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究  

Thermoelectric Property of Si_(1-x)Ge_x/B Multilayer Thin Film Prepared by Magnetron Sputtering

作　　者：杜鑫[1,2] 苗蕾[1,3] 刘呈燕[1,3] 王潇漾 

机构地区：[1]中国科学院广州能源研究所,中国科学院可再生能源重点实验室,广州510640 [2]中国科学院大学,北京100049 [3]桂林电子科技大学,广西桂林541004

出　　处：《新能源进展》2016年第5期345-350,共6页Advances in New and Renewable Energy

基　　金：国家自然科学基金(51572049,51562005);广东省科技计划项目(2013B050800006);中国科学院BIC对外合作项目(182344KYSB20130006)

摘　　要：本文通过磁控溅射法制备了一种独特的Si Ge/B五层结构薄膜材料,每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能,结果表明:B掺杂的溅射时间最佳为30 s;当退火温度为650℃时,薄膜的致密性最好,且在此温度下具有较高的Seebeck系数,最大值为6.75×10-4 V/K,电阻率最小值为1.6×10-5?·m,其功率因子最大值为0.026 W/(m·K2)。Unique structure （SiGe/B） based multilayer film prepared by magnetron sputtering was designed with purposes of improving electrical conductivity and Seebeck coefficient, and reducing thermal conductivity. The multilayer film contains 5 periods and each of them consisted of a 60-nm-thick Si60Ge40 layer and a 0.55-nm-thick B layer. Its thermoelectric performance was investigated and results showed that the best doping time of B was 30 s. When the annealing temperature was 650oC, the optimized film showed greatly enhanced Seebeck coefficient up to 6.75 × 10^-4 V/K with decreased electrical resistivity of 1.6×10^-5×·m, and the maximum power factor was 0.026 W/m·K^2.

关 键 词：热电材料 硅锗薄膜 纳米结构 热电性能 

分 类 号：TK6[动力工程及工程热物理—生物能]