Synthesis and sintering of samarium rich SmS_x and its electrical property  

作　　者：Liang Li Shinji Hirai Yohei Tasaki 

机构地区：[1]Department of Materials Science and Engineering, Muroran Institute of Technology

出　　处：《Journal of Rare Earths》2016年第10期1042-1047,共6页稀土学报（英文版）

基　　金：Project supported by Scientific Research(B)(24360314)from the Ministry of Education,Science,Sports and Culture of Japan

摘　　要：Non-stoichiometric samarium monosulfide（SmS_x, 0.55≤x≤1.2） was synthesized from Sm_2S_3 and SmH_3 at 1273 K for 3 h under vacuum. The influence of reaction ratio of Sm_2S_3 to SmH_3 on the fabrication of SmS_x was investigated. The fabrication of SmS required the molar ratio of Sm_2S_3 to SmH_3 above 1. Lattice parameter of synthetic SmS_x increased firstly and then decreased to saturate following with the addition of SmH_3 content. SmS_x compact was sintered at 1373 K by spark plasma sintering. Density of synthetic SmS_x was about 99% of theory density. Seebeck coefficient of n-type semiconductor Sm Sx decreased as temperature rose. The absolute value was distributed between 170–280 μV/K. The electrical resistivity of SmS_x（0.86≤x≤1.07） decreased with temperature increasing and showed similar temperature dependence. The surplus Sm which randomly distributed in the SmS_x（0.55≤x≤0.75） matrix led to a remarked reduction of electrical resistivity. The optimized power factor for SmS_（0.6） and Sm S_（0.75） could reach 1500 μW/（K^2·m） at 600 K.Non-stoichiometric samarium monosulfide（SmS_x, 0.55≤x≤1.2） was synthesized from Sm_2S_3 and SmH_3 at 1273 K for 3 h under vacuum. The influence of reaction ratio of Sm_2S_3 to SmH_3 on the fabrication of SmS_x was investigated. The fabrication of SmS required the molar ratio of Sm_2S_3 to SmH_3 above 1. Lattice parameter of synthetic SmS_x increased firstly and then decreased to saturate following with the addition of SmH_3 content. SmS_x compact was sintered at 1373 K by spark plasma sintering. Density of synthetic SmS_x was about 99% of theory density. Seebeck coefficient of n-type semiconductor Sm Sx decreased as temperature rose. The absolute value was distributed between 170–280 μV/K. The electrical resistivity of SmS_x（0.86≤x≤1.07） decreased with temperature increasing and showed similar temperature dependence. The surplus Sm which randomly distributed in the SmS_x（0.55≤x≤0.75） matrix led to a remarked reduction of electrical resistivity. The optimized power factor for SmS_（0.6） and Sm S_（0.75） could reach 1500 μW/（K^2·m） at 600 K.

关 键 词：samarium monosulfide SmH_3 Seebeck coefficient electrical resistivity rare earths 

分 类 号：TQ133.3[化学工程—无机化工]