碳化硅零件氧化辅助抛光超精密加工的研究现状  

Research status in ultra-precision machining of silicon carbide parts by oxidation-assisted polishing

作　　者：沈新民[1] 涂群章[1] 张晓南[1] 殷勤[1] 王东[1] 

机构地区：[1]解放军理工大学野战工程学院,江苏南京210007

出　　处：《河北科技大学学报》2016年第5期431-440,共10页Journal of Hebei University of Science and Technology

基　　金：国家重点研发计划项目(2016YFC0802903);国家自然科学基金(51505498);江苏省自然科学基金(BK20150714)

摘　　要：通过等离子体氧化、热氧化、电化学氧化在碳化硅基材上获得软质氧化层,利用软磨粒抛光实现氧化物的快速去除,有利于提高材料去除效率、提升加工表面质量。研究发现,通过等离子体氧化辅助抛光,表面粗糙度RMS和Ra分别达到0.626nm和0.480nm;通过热氧化辅助抛光,表面粗糙度RMS和Ra分别达到0.920nm和0.726nm;在电化学氧化中,基于Deal-Grove模型计算得到的氧化速度为5.3nm/s,电化学氧化辅助抛光后的表面粗糙度RMS和Ra分别是4.428nm和3.453nm。氧化辅助抛光有助于烧结碳化硅加工工艺水平的提升,促进碳化硅零件在光学、陶瓷等领域的应用。Oxidation-assisted polishing is an important machining method for obtaining SiC parts with high precision.Through plasma oxidation,thermal oxidation,and anodic oxidation,soft oxide can be obtained on the RS-SiC substrate.With the assistance of abrasive polishing to remove the oxide rapidly,the material removal rate can be increased and the surface quality can be improved.The research results indicate that the surface roughness root-mean-square（RMS）and roughness-average（Ra）can reach 0.626 nm and 0.480 nm by plasma oxidation-assisted polishing;in thermal oxidation-assisted polishing,the RMS and Ra can be 0.920 nm and 0.726nm;in anodic oxidation,the calculated oxidation rate is 5.3nm/s based on Deal-Grove model,and the RMS and Ra are 4.428 nm and 3.453 nm respectively in anodic oxidation-assisted polishing.The oxidation-assisted polishing can be propitious to improve the process level in machining RS-SiC,which would promote the application of SiC parts in optics and ceramics fields.

关 键 词：特种加工工艺 烧结碳化硅 氧化辅助抛光 表面粗糙度 材料去除效率 

分 类 号：TH164[机械工程—机械制造及自动化] TB332[一般工业技术—材料科学与工程]